Hybrid power amplifier comprising heterojunction bipolar transistors (HBTs) and complementary metal oxide semiconductor (CMOS) devices
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United States of America Patent
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Apr 5, 2016
Grant Date -
Dec 3, 2015
app pub date -
May 28, 2014
filing date -
May 28, 2014
priority date (Note) -
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Abstract
A heterojunction bipolar transistor (HBT) hybrid type RF (radio frequency) power amplifier includes a first device including an input terminal for receiving an RF signal, a pre-driver stage for amplifying the received RF signal, and an output terminal, the input terminal, the pre-driver stage and the output terminal being disposed in or over a first substrate; and a second device having a main stage having an HBT amplifier circuit disposed in or over a second substrate to further amplify the RF signal amplified by the pre-driver stage. The RF signal further amplified by the main stage is output through the output terminal of the first device.
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