Semiconductor storage device having resistance-change storage elements

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United States of America Patent

PATENT NO 9311996
APP PUB NO 20160071585A1
SERIAL NO

14624995

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Abstract

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A semiconductor storage device according to an embodiment includes a plurality of resistance-change storage elements. A plurality of bit lines are connected to the storage elements, respectively. A voltage control circuit controls a decreasing rate of an absolute value of a voltage of a selected bit line among the bit lines when data is written to one of the storage elements.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ogiwara, Ryu Yokohama, JP 83 674
Takashima, Daisaburo Yokohama, JP 245 3262

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