Devices and methods of programming memory cells

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United States of America Patent

PATENT NO 9312023
APP PUB NO 20140016411A1
SERIAL NO

14027709

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Abstract

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Devices and methods of programming memory cells, both SLC and MLC, such as to reduce charge-storage structure to charge-storage structure coupling, are shown and described. Programming of memory cells can include comparing a first page of data to a second page of data, and further programming cells corresponding to the first page of data that will not likely be affected by coupling from programming the second page of data.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Feeley, Peter Boise, US 159 1027
Kawai, Koichi Kanagawa, JP 81 788
Sakui, Koji Tokyo, JP 278 4187

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