Semiconductor device
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United States of America Patent
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Apr 12, 2016
Grant Date -
Sep 17, 2015
app pub date -
Sep 12, 2014
filing date -
Mar 14, 2014
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor device including a semiconductor substrate having a first surface and a second surface, the first surface being configured for formation of a semiconductor element; a through hole extending through the semiconductor substrate; and a through electrode disposed in the through hole. The through electrode includes an insulating film disposed along a sidewall of the through hole, a conductive layer comprising a first material disposed along the insulating film, and an electrode layer comprising a second material filled inside the through hole over the conductive layer. The first material is softer than the second material. The second material has a melting point higher than a melting point of the first material. The electrode layer includes a void portion being closed near the second surface of the semiconductor substrate.
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