Structure and method to reduce crystal defects in epitaxial fin merge using nitride deposition

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United States of America Patent

PATENT NO 9312273
APP PUB NO 20150155306A1
SERIAL NO

14093646

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Abstract

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FinFET devices and methods of making the same. A structure includes: a substrate with a buried insulator, a plurality of fins over the buried insulator, and a nitride material filing spaces between the plurality of fins, wherein the plurality of fins remain uncovered by the nitride.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Adam, Thomas N Slingerlands, US 146 2311
Cheng, Kangguo Slingerlands, US 3073 29791
Khakifirooz, Ali Los Altos, US 842 11906
Reznicek, Alexander Troy, US 1408 11211
Sreenivasan, Raghavasimhan Schenectady, US 49 730

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