Semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9312337
APP PUB NO 20150069461A1
SERIAL NO

14202970

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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This device includes a first base layer of a first conduction type. A second base-layer of a second conduction type is provided above the first base-layer. A first semiconductor layer of the first conduction type is above an opposite side of the second base-layer to the first base-layer. A second semiconductor layer of the second conduction type is above an opposite side of the first base-layer to the second base-layer. A plurality of first electrodes are provided at the first semiconductor layer and the second base-layer via first insulating films. A second electrode is provided between adjacent ones of the first electrodes and provided at the first semiconductor layer and the second base-layer via a second insulating film. A resistance of the first base-layer above a side of the second electrode is lower than a resistance of the first base-layer above a side of the first electrodes.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Misu, Shinichiro Tokyo, JP 12 78
Nakamura, Kazutoshi Himeji, JP 108 1069

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