Partially-blocked well implant to improve diode ideality with SiGe anode

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United States of America Patent

PATENT NO 9312358
APP PUB NO 20140061857A1
SERIAL NO

13617140

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Abstract

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A method of manufacturing a semiconductor device is disclosed. A p-type substrate is doped to form an N-well in a selected portion of a p-type substrate adjacent an anode region of the substrate. A p-type doped region is formed in the anode region of the p-type substrate. The p-type doped region and the N-well form a p-n junction.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Guo, Dechao Fishkill, US 268 2423
Haensch, Wilfried E Somers, US 75 851
Wang, Gan Fishkill, US 65 1312
Wang, Xin Beacon, US 1343 12607
Wang, Yanfeng Fishkill, US 124 704

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