Semiconductor light emitting device and manufacturing method thereof

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United States of America Patent

PATENT NO 9312444
APP PUB NO 20140061660A1
SERIAL NO

13787739

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Abstract

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A semiconductor light emitting device includes a supporting substrate, a light emitting layer including a nitride semiconductor, and a nitride multilayer film. The nitride multilayer film includes a first layer including a first nitride semiconductor containing aluminum nitride, a second layer including a second nitride semiconductor containing gallium nitride, and a third layer including the first nitride semiconductor containing aluminum nitride.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sugawara, Hideto Ishikawa, JP 88 2419

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