Method for evaluating oxide semiconductor thin film, and method for quality control of oxide semiconductor thin film

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United States of America Patent

PATENT NO 9316589
APP PUB NO 20150355095A1
SERIAL NO

14760023

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Abstract

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This method for evaluating an oxide semiconductor thin film includes evaluating the stress stability of an oxide semiconductor thin film on the basis of the light emission intensity of luminescent light excited when radiating an electron beam or excitation light at a sample at which the oxide semiconductor thin film is formed. The stress stability of the oxide semiconductor thin film is evaluated on the basis of the light emission intensity (L1) observed in the range of 1.6-1.9 eV of the luminescent light excited from the oxide semiconductor thin film.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL LTD )2-4 WAKINOHAMA-KAIGANDORI 2-CHOME CHUO-KU KOBE-SHI HYOGO 651-8585

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hayashi, Kazushi Kobe, JP 36 434
Kishi, Tomoya Kobe, JP 15 120
Kugimiya, Toshihiro Kobe, JP 78 1101
Miki, Aya Kobe, JP 41 452

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