Dielectric extension to mitigate short channel effects
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United States of America Patent
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Apr 19, 2016
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N/A
app pub date -
Mar 16, 2007
filing date -
Dec 27, 2006
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Abstract
In patterning a transistor, some of a layer of gate dielectric material is allowed to remain over a semiconductor substrate upon which the transistor is formed. This remaining dielectric material retards the implantation of dopants into the underlying substrate, effectively lengthening a channel region of the transistor. This mitigates unwanted short channel effects, such as leakage currents, for example, and thus mitigates yield loss by establishing a transistor that performs in a more predictable or otherwise desirable manner.
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