Solid-state image sensing device manufacturing method and solid-state image sensing device
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United States of America Patent
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Apr 19, 2016
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Nov 19, 2015
app pub date -
Jul 24, 2015
filing date -
Sep 14, 2012
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Abstract
According to one embodiment, a solid-state image sensing device manufacturing method includes forming a photoelectric converting element, a diffusion layer included in a floating diffusion, and a read transistor, in a photoelectric converting element formation region of a semiconductor substrate, a floating diffusion formation region, and a read transistor formation region located between the photoelectric converting element formation region and the floating diffusion formation region, respectively, and forming a semiconductor layer including a impurity on the diffusion layer on the semiconductor substrate.
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