Semiconductor device and method for manufacturing semiconductor device
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United States of America Patent
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Apr 19, 2016
Grant Date -
Mar 27, 2014
app pub date -
Jun 25, 2013
filing date -
Sep 21, 2012
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Abstract
A semiconductor device according to one embodiment includes a semiconductor substrate, a back-gate layer formed above the semiconductor substrate, and a stacked body formed above the back-gate layer and comprising a plurality of insulating layers alternately formed between a plurality of electrode layers. The lowermost electrode layer of the plurality of electrode layers contains metal, and remaining electrode layers of the plurality of electrode layers other than the lowermost electrode layer do not contain the metal. Furthermore, the semiconductor device includes a pair of columnar semiconductor layers penetrating the stacked body and a semiconductor layer connecting lower portions of the pair of columnar semiconductor layers, the semiconductor layer embedded in the surface of the back-gate layer.
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