Fin-type PIN diode array
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 19, 2016
Grant Date -
N/A
app pub date -
Jun 23, 2015
filing date -
Jun 23, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Structures and methods of manufacturing a fin-type PIN diode array include forming a plurality of first charge-type doped silicon fins disposed in parallel on a planar substrate in a first direction, forming undoped epitaxial growths of silicon at intervals along a length of each silicon fin, where each epitaxial growth includes a depleted intrinsic region, and forming a plurality of second charge-type doped polysilicon fins disposed in parallel and disposed perpendicularly to the first direction. The polysilicon fins are formed to contact, at intervals along a length of each polysilicon fin, an uppermost surface of one of the undoped epitaxial growths of silicon, to form a PIN diode at each intersection of each of the first charge-type doped silicon fins and the second charge-type doped polysilicon fins.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully