Sintered refractory material based on silicon carbide with a silicon nitride binder

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United States of America Patent

PATENT NO 9321690
APP PUB NO 20110024956A1
SERIAL NO

12866603

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Abstract

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A sintered material based on silicon carbide (SiC) reactively sintered between 1,100° C. and 1,700° C. to form a silicon nitride binder (Si3N4), intended in particular for fabricating an aluminum electrolysis cell, including 0.05% to 1.5% of boron, the Si3N4/SiC weight ratio being in the range 0.05 to 0.45. Application, in particular, to an electrolysis cell.

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Patent Owner(s)

Patent OwnerAddress
SAINT-GOBAIN CENTRE DE RECHERCHES ET D'ETUDES EUROPEENTOUR SAINT-GOBAIN » 12 PLACE DE L'IRIS COURBEVOIE 92400

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Citti, Olivier Wellesley, US 43 212
Jorge, Eric Les Valayans, FR 13 61
Marguin, Olivier Caumont sur Durance, FR 3 14
Moitrier, Lionel Mallemort, FR 5 13

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