High-k metal gate device structure for human blood gas sensing
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United States of America Patent
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Apr 26, 2016
Grant Date -
Oct 9, 2014
app pub date -
Apr 3, 2013
filing date -
Apr 3, 2013
priority date (Note) -
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Abstract
A device structure for detecting partial pressure of oxygen in blood includes a semiconductor substrate including a source region and a drain region. A multi-layer gate structure is formed on the semiconductor substrate. The multi-layer gate structure includes an oxide layer formed over the semiconductor substrate, a high-k layer formed over the oxide layer, a metal gate layer formed over the high-k layer, and a polysilicon layer formed over the metal gate layer. A receiving area holds a blood sample in contact with the multi-layer gate structure. The high-k layer is exposed to contact the blood sample in the receiving area.
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