Semiconductor memory device

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United States of America Patent

PATENT NO 9324406
APP PUB NO 20150117085A1
SERIAL NO

14592729

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Abstract

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According to one embodiment, a semiconductor memory device includes a memory cell and a control circuit. The memory cell is such that a ferroelectric film is provided as a gate dielectric film. When data is stored in the memory cell, the control circuit applies a first voltage to the gate dielectric film and thereafter applies a second voltage, whose amplitude is smaller than that of the first voltage and whose polarity is opposite to that of the first voltage.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kunishima, Iwao Mie, JP 51 932
Okada, Takayuki Mie, JP 77 868
Shuto, Susumu Kanagawa, JP 49 1542

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