Methods of forming replacement fins for a FinFET device
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United States of America Patent
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Apr 26, 2016
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app pub date -
Jun 1, 2015
filing date -
Jun 1, 2015
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Abstract
One illustrative method includes, among other things, forming a plurality of trenches in a semiconductor substrate so as to define a substrate fin, forming a layer of insulating material in the trenches, and forming a layer of CTE-matching material above the upper surface of the layer of insulating material, wherein the layer of CTE-matching material has a CTE that is within ±20% of the replacement fin CTE and wherein the layer of CTE-matching material partially defines a replacement fin cavity that exposes an upper portion of the substrate fin. In this example, the method also includes forming the replacement fin on the substrate fin and in the replacement fin cavity, removing the layer of CTE-matching material and forming a gate structure around at least a portion of the replacement fin.
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