Self-aligned dual-height isolation for bulk FinFET
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United States of America Patent
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Apr 26, 2016
Grant Date -
May 21, 2015
app pub date -
Nov 19, 2013
filing date -
Nov 19, 2013
priority date (Note) -
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Abstract
A method of forming a semiconductor structure includes forming a first isolation region between fins of a first group of fins and between fins of a second group of fins. The first a second group of fins are formed in a bulk semiconductor substrate. A second isolation region is formed between the first group of fins and the second group of fins, the second isolation region extends through a portion of the first isolation region such that the first and second isolation regions are in direct contact and a height above the bulk semiconductor substrate of the second isolation region is greater than a height above the bulk semiconductor substrate of the first isolation region.
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