Self-formation of high-density arrays of nanostructures

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United States of America Patent

PATENT NO 9324794
SERIAL NO

14726104

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Abstract

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A method for forming nanostructures includes bonding a flexible substrate to a crystalline semiconductor layer having a two-dimensional material formed on a side opposite the flexible substrate. The crystalline semiconductor layer is stressed in a first direction to initiate first cracks in the crystalline semiconductor layer. The first cracks are propagated through the crystalline semiconductor layer and through the two-dimensional material. The stress of the crystalline semiconductor layer is released to provide parallel structures including the two-dimensional material on the crystalline semiconductor layer.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dimitrakopoulos, Christos D Baldwin Place, US 77 1417
Kim, Jeehwan White Plains, US 247 1233
Park, Hongsik Yorktown Heights, US 36 294
Shin, Byungha White Plains, US 20 64

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