Semiconductor device and method for manufacturing the same
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United States of America Patent
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Apr 26, 2016
Grant Date -
Jul 31, 2014
app pub date -
Jun 17, 2013
filing date -
Jan 28, 2013
priority date (Note) -
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Abstract
In one embodiment, a semiconductor device includes a first diffusion layer of a first conductive type and a second diffusion layer of a second conductive type which is a reverse conductive type of the first conductive type, the first conductive type first diffusion layer and the second conductive type diffusion layer being spaced apart and provided in a semiconductor layer, a pocket region of the second conductive type which is provided on a surface portion of the semiconductor layer adjacently to the first diffusion layer, and a first extension region of the first conductive type which is provided in the semiconductor layer to cover at least a portion of the pocket region. A second diffusion layer side end portion of the first extension region is positioned closer to a second diffusion layer side than a second diffusion layer side end portion of the pocket region.
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