Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same

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United States of America Patent

PATENT NO 9324811
APP PUB NO 20140084341A1
SERIAL NO

14018345

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Abstract

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Structures including a tensile-stressed silicon arsenic layer, devices including the structures, and methods of forming the devices and structures are disclosed. Exemplary tensile-stressed silicon arsenic layer have an arsenic doping level of greater than 5 E+20 arsenic atoms per cubic centimeter. The structures can be used to form metal oxide semiconductor devices.

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Patent Owner(s)

  • ASM IP HOLDING B.V.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Weeks, Keith Doran Chandler, US 35 2286

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