Method of forming a semiconductor device

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United States of America Patent

PATENT NO 9324865
APP PUB NO 20150028355A1
SERIAL NO

14514284

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Abstract

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A semiconductor device having dislocations and a method of fabricating the semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor device enhance carrier mobility. The method includes providing a substrate having an isolation feature therein and two gate stacks overlying the substrate, wherein one of the gate stacks is atop the isolation feature. The method further includes performing a pre-amorphous implantation process on the substrate. The method further includes forming a stress film over the substrate. The method also includes performing an annealing process on the substrate and the stress film.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fang, Ziwei Baoshan Township, TW 191 2939
Wang, Tsan-Chun Hsin-Chu, TW 74 1004
Yu, De-Wei Ping-tung, TW 50 759

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