Back gate single-crystal flexible thin film transistor and method of making
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United States of America Patent
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Apr 26, 2016
Grant Date -
Aug 27, 2015
app pub date -
Feb 18, 2015
filing date -
Feb 27, 2014
priority date (Note) -
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Abstract
A gate dielectric material and a gate conductor portion are formed on a single-crystal semiconductor material of a substrate. A dielectric structure is then formed surrounding the gate conductor portion and thereafter a stressor layer is formed on the dielectric structure. A controlled spalling process is then performed and thereafter a material removal process can be used to expose a surface of the single-crystal semiconductor material. A source region and a drain region are then formed on the exposed surface of the single-crystal semiconductor material, which exposed surface is opposite the surface including the gate dielectric.
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