Optical rule checking for detecting at risk structures for overlay issues
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United States of America Patent
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May 3, 2016
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app pub date -
Sep 28, 2012
filing date -
Sep 28, 2012
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Abstract
A method and system is provided for detecting at risk structures due to mask overlay that occur during lithography processes. The method can be implemented in a computer infrastructure having computer executable code tangibly embodied on a computer readable storage medium having programming instructions. The programming instructions are operable to obtain a simulation of a metal layer and a via, and determine a probability that an arbitrary point (x, y) on the metal layer is covered by the via by calculating a statistical coverage area metric followed by mathematical approximations of a summing function.
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