Memory program disturb reduction

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United States of America Patent

PATENT NO 9330777
SERIAL NO

14632556

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Abstract

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Some embodiments include a memory device and a method of programming memory cells of the memory device. One such method can include applying, during a first pass of programming, a first bias voltage value to a source select gate to isolate memory cells from a source, applying a programming voltage to an access line of a page of the memory cells during the first pass of programming, and applying a second bias voltage value to the source select gate to isolate the memory cells from the source during a second pass of programming. Further devices, systems, and methods are disclosed.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Goda, Akira Boise, US 298 4150
Helm, Mark Santa Cruz, US 46 1051
Kalavade, Pranav San Jose, US 101 650
Srinivasan, Charan Boise, US 23 173

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