DRAM-based anti-fuse cells
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United States of America Patent
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May 3, 2016
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N/A
app pub date -
Mar 4, 2015
filing date -
Mar 4, 2015
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Abstract
Apparatuses and methods for programming and reading from anti-fuse cells are disclosed herein. For example, a semiconductor device may include a plurality of word lines, a plurality of bit lines, a cell plate, a plurality of cells, and a control circuit. Each of the plurality of cells includes a switch and a capacitor coupled in series between an associated one of the plurality of bit lines and the cell plate, and the switch is controlled by an associated one of the plurality of word lines. The control circuit is configured to provide the cell plate with a first voltage and further configured to change the cell plate from the first voltage to a second voltage before one of the plurality of word lines is activated.
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