Epitaxially grown quantum well finFETs for enhanced pFET performance

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9331073
APP PUB NO 20160093613A1
SERIAL NO

14497380

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Abstract

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A method of forming a quantum well having a conformal epitaxial well on a {100} crystallographic orientated fin. The method may include: forming fins in a {100} crystallographic oriented substrate; forming a conformal well on the fins using epitaxial growth; and forming a conformal barrier on the conformal well using epitaxial growth.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bergendahl, Marc A Troy, US 98 1151
Demarest, James J Rensselaer, US 41 529
He, Hong Schenectady, US 1180 7747
Knupp, Seth L Schenectady, US 8 72
Sreenivasan, Raghavasimhan Schenectady, US 49 728
Teehan, Sean Rensselaer, US 72 562
Upham, Allan W Waterford, US 5 68
Yang, Chih-Chao Glenmont, US 1031 7515

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