Nonvolatile semiconductor storage device and method for manufacturing the same
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United States of America Patent
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May 3, 2016
Grant Date -
Oct 16, 2014
app pub date -
Jun 24, 2014
filing date -
Mar 19, 2008
priority date (Note) -
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Abstract
According to an aspect of the present invention, there is provided a nonvolatile semiconductor storage device including: a semiconductor substrate; a source region and a drain region that are formed in the semiconductor substrate so as to be separated from each other and so as to define a channel region therebetween; a tunnel insulating film that is formed on the channel region; an insulative charge storage film that is formed on the tunnel insulating film; a conductive charge storage film that is formed on the insulative charge storage film so as to be shorter than the insulative charge storage film in a channel direction; an interlayer insulating film that is formed on the conductive charge storage film; and a gate electrode that is formed on the interlayer insulating film.
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