Devices with cavity-defined gates and methods of making the same

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United States of America Patent

PATENT NO 9331203
SERIAL NO

14198937

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Abstract

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Disclosed are methods, systems and devices, including a method that includes the acts of forming a semiconductor fin, forming a sacrificial material adjacent the semiconductor fin, covering the sacrificial material with a dielectric material, forming a cavity by removing the sacrificial material from under the dielectric material, and forming a gate in the cavity.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Juengling, Werner Boise, US 253 4600

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