Powder, sintered body and sputtering target, each containing elements of Cu, In, Ga and Se, and method for producing the powder
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United States of America Patent
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May 10, 2016
Grant Date -
Apr 25, 2013
app pub date -
Jun 27, 2011
filing date -
Jun 29, 2010
priority date (Note) -
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Abstract
The present invention provides a Cu—In—Ga—Se powder containing Cu, In, Ga and Se in which cracks do not occur during sintering or processing, and a sintered body and sputtering target, each using the same. The present invention relates to a powder containing Cu, In Ga and Se, which contains a Cu—In—Ga—Se compound and/or a Cu—In—Se compound in an amount of 60 mass % or more in total. The powder of the present invention preferably contains an In—Se compound in an amount of 20 mass % or less and/or a Cu—In compound in an amount of 20 mass % or less.
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