SMU RF transistor stability arrangement
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United States of America Patent
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May 10, 2016
Grant Date -
Aug 7, 2014
app pub date -
May 23, 2013
filing date -
Feb 1, 2013
priority date (Note) -
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Abstract
An RF testing method and system by which a DC measurement pathway can also act like a properly terminated RF pathway. Achieving this requires that the output HI, LO, and Sense HI conductors are terminated in a frequency selective manner such that the terminations do not affect the SMU DC measurements. Once all SMU input/output impedances are controlled, as well as properly terminated to eliminate reflections, the high-speed devices will no longer oscillate during device testing, so long as the instruments maintain a high isolation from instrument-to-instrument (separate instruments are used on the gate and drain, or on the input and output of the device). The output of HI, LO and Sense HI conductors are coupled to various nodes of the DUT via three triaxial cables, the outer shieldings of which are coupled to each other and to an SMU ground.
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