Method of cleaving a thin sapphire layer from a bulk material by implanting a plurality of particles and performing a controlled cleaving process
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United States of America Patent
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May 10, 2016
Grant Date -
Aug 15, 2013
app pub date -
Feb 13, 2013
filing date -
Feb 13, 2012
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Abstract
Embodiments relate to use of a particle accelerator beam to form thin layers of material from a bulk substrate. In particular embodiments, a bulk substrate (e.g. donor substrate) having a top surface is exposed to a beam of accelerated particles. In certain embodiments, this bulk substrate may comprise a core of crystalline sapphire (Al2O3) material. Then, a thin layer of the material is separated from the bulk substrate by performing a controlled cleaving process along a cleave region formed by particles implanted from the beam. Embodiments may find particular use as hard, scratch-resistant covers for personal electric device displays, or as optical surfaces for fingerprint, eye, or other biometric scanning.
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