Prevention of contact to substrate shorts
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United States of America Patent
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May 10, 2016
Issued Date -
N/A
app pub date -
Oct 9, 2012
filing date -
Oct 9, 2012
priority date (Note) -
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Abstract
Isolation trenches are etched through an active silicon layer overlying a buried oxide on a substrate into the substrate, and through any pad dielectric(s) on the active silicon layer. Lateral epitaxial growth of the active silicon layer forms protrusions into the isolation trenches to a lateral distance of at least about 5 nanometers, and portions of the isolation trenches around the protrusions are filled with dielectric. Raised source/drain regions are formed on portions of the active silicon layer including a dielectric. As a result, misaligned contacts passing around edges of the raised source/drain regions remain spaced apart from sidewalls of the substrate in the isolation trenches.
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