Semiconductor device
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United States of America Patent
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May 10, 2016
Grant Date -
Aug 27, 2015
app pub date -
May 11, 2015
filing date -
Nov 6, 2012
priority date (Note) -
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Abstract
According to one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer provided between the first electrode and the second electrode; a second semiconductor layer provided between the first semiconductor layer and the second electrode, and the second semiconductor layer having a lower impurity concentration than the first semiconductor layer; a first semiconductor region provided between part of the second semiconductor layer and the second electrode; a second semiconductor region provided between a portion different from the part of the second semiconductor layer and the second electrode, and the second semiconductor region being in contact with the first semiconductor region; and a third semiconductor region provided between at least part of the first semiconductor region and the second electrode.
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