Semiconductor light emitting device

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United States of America Patent

PATENT NO 9337396
SERIAL NO

14173954

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Abstract

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According to one embodiment, a semiconductor light emitting device includes a first metal layer, a second metal layer, a third metal layer, a semiconductor light emitting unit and an insulating unit. The semiconductor light emitting unit is separated from the first metal layer in a first direction. The second metal layer is provided between the first metal layer and the semiconductor light emitting unit to be electrically connected to the first metal layer, and is light-reflective. The second metal layer includes a contact metal portion, and a peripheral metal portion. The third metal layer is light-reflective. The third metal layer includes an inner portion, a middle portion, and an outer portion. The insulating unit includes an first insulating portion, a second insulating portion, and a third insulating portion.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ito, Toshihide Tokyo, JP 54 243
Katsuno, Hiroshi Tokyo, JP 96 1200
Mitsugi, Satoshi Kanagawa-ken, JP 37 195
Nunoue, Shinya Chiba-ken, JP 312 3298

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