Method and system for modifying photoresist using electromagnetic radiation and ion implantation

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United States of America Patent

PATENT NO 9340877
APP PUB NO 20130247824A1
SERIAL NO

13888693

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Abstract

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A method of reducing surface roughness of a resist feature disposed on a substrate includes generating a plasma having a plasma sheath and ions therein. A shape of the boundary between the plasma and plasma sheath is modified using a plasma sheath modifier, so that a portion of the boundary facing the substrate is not parallel to a plane defined by the substrate. During a first exposure, the resist feature is exposed to electromagnetic radiation having a desired wavelength and the ions are accelerated across the boundary having the modified shape toward the resist features over an angular range.

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Patent Owner(s)

  • VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Godet, Ludovic Boston, US 313 2796
Martin, Patrick M Ipswich, US 25 836

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