Multiple step programming in a memory device

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United States of America Patent

PATENT NO 9343168
APP PUB NO 20140369117A1
SERIAL NO

14471550

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Abstract

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Method of operating a memory include programming a memory cell and reading the memory cell to determine a programmed threshold voltage of the memory cell. If the programmed threshold voltage is within a threshold voltage distribution of a plurality of threshold voltage distributions, the memory cell is reprogrammed, and if the programmed threshold voltage is not within a threshold voltage distribution of the plurality of threshold voltage distributions, the memory cell is allowed to remain at the programmed threshold voltage.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jones, Mason Seaford, US 8 90
Moschiano, Violante Bacoli, IT 186 1386

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