Ion implantation apparatus, beam parallelizing apparatus, and ion implantation method
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United States of America Patent
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May 17, 2016
Grant Date -
Mar 5, 2015
app pub date -
Aug 26, 2014
filing date -
Aug 29, 2013
priority date (Note) -
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status (Latency Note)
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Abstract
An ion implantation apparatus includes a beam parallelizing unit and a third power supply unit. The beam parallelizing unit includes an acceleration lens, and a deceleration lens disposed adjacent to the acceleration lens in an ion beam transportation direction. The third power supply unit operates the beam parallelizing unit under one of a plurality of energy settings. The plurality of energy settings includes a first energy setting suitable for transport of a low energy ion, and a second energy setting suitable for transport of a high energy ion beam. The third power supply unit is configured to generate a potential difference in at least the acceleration lens under the second energy setting, and generate a potential difference in at least the deceleration lens under the first energy setting. A curvature of the deceleration lens is smaller than a curvature of the acceleration lens.
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