Microelectronic devices with through-silicon vias and associated methods of manufacturing
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United States of America Patent
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May 17, 2016
Grant Date -
Sep 25, 2014
app pub date -
Dec 31, 2013
filing date -
Apr 22, 2011
priority date (Note) -
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Abstract
Microelectronic devices with through-silicon vias and associated methods of manufacturing such devices. One embodiment of a method for forming tungsten through-silicon vias comprising forming an opening having a sidewall such that the opening extends through at least a portion of a substrate on which microelectronic structures have been formed. The method can further include lining the sidewall with a dielectric material, depositing tungsten on the dielectric material such that a cavity extends through at least a portion of the tungsten, and filling the cavity with a polysilicon material.
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