Semiconductor device and method of manufacturing the same
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United States of America Patent
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May 17, 2016
Grant Date -
Jan 21, 2016
app pub date -
Apr 23, 2015
filing date -
Jul 17, 2014
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor device includes a substrate; a stack structure including a plurality of insulating films and a plurality of metal films disposed alternately one above another. The stack structure is provided above the substrate and has a stairway portion including a plurality of terraces located at least at one end portion thereof. A liner film and a stopper film are disposed so as to cover an upper portion the stack structure in the stairway portion formed of the terraces. A plurality of holes are connected to each of the terraces. Each of the terraces is formed of a stack of the insulating films and the metal films. Each of the holes extends through the stopper film and the liner film and connect to the metal films of the terraces.
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