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United States of America Patent

PATENT NO 9343408
APP PUB NO 20150130065A1
SERIAL NO

14075228

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Abstract

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Copper can be etched with selectivity to Ta/TaN barrier liner and SiC hardmask layers, for example, to reduce the potential copper contamination. The copper film can be recessed more than the liner to further enhance the protection. Wet etch solutions including a mixture of HF and H2SO4 can be used for selective etching copper with respect to the liner material, for example, the copper film can be recessed between 2 and 3 nm, and the barrier liner film can be recessed between 1.5 and 2 nm.

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Patent Owner(s)

Patent OwnerAddress
ALSEPHINA INNOVATIONS INC303 TERRY FOX DRIVE SUITE 300 OTTAWA K2K 3J1

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Duong, Anh Fremont, US 40 331
Ryan, Errol Todd Clifton Park, US 64 485

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