Depletion-mode field-effect transistor-based phototransistor

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United States of America Patent

PATENT NO 9343608
APP PUB NO 20140363917A1
SERIAL NO

14461038

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Abstract

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A depletion-mode phototransitor is disclosed. The phototransistor having a substrate, a gate, a source, a drain and a channel. The source, drain and channel are doped to be the same type of semiconductor. The substrate can be made of silicon and/or germanium. The gate can be made of either aluminum or polysilicon.

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Patent Owner(s)

Patent OwnerAddress
BOARD OF REGENTS THE UNIVERSITY OF TEXAS SYSTEMAUSTIN TX 78701

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Na, Yeul Santa Clara, US 12 17
Saraswat, Krishna C Saratoga, US 16 577

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