Cross-point memory utilizing Ru/Si diode

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United States of America Patent

PATENT NO 9343674
APP PUB NO 20140346424A1
SERIAL NO

14456177

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Abstract

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Memory devices utilizing memory cells including a resistive element and a diode coupled in series between two conductors. The diodes include a ruthenium material and a silicon material. The diodes further include an interface of ruthenium or ruthenium silicide between the silicon material and the ruthenium material.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Prall, Kirk D Boise, US 139 2417
Ramaswamy, Nirmal Boise, US 72 1187

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