Methods for fabricating damascene write poles using ruthenium hard masks

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United States of America Patent

PATENT NO 9346672
SERIAL NO

12535645

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Abstract

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A method for forming a write pole comprises the steps of providing a structure comprising a substrate layer, a ruthenium layer over the substrate layer, and a tantalum layer over the ruthenium layer, providing an opening in the tantalum layer over a portion of the ruthenium layer, performing a first reactive ion etching step on the portion of the ruthenium layer under the opening in the tantalum layer to provide an opening in the ruthenium layer over a portion of the substrate layer, performing a second reactive ion etching step on the portion of the substrate layer under the opening in the ruthenium layer to form a damascene trench therein, and filling the damascene trench with a magnetic material to form the write pole.

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Patent Owner(s)

  • WESTERN DIGITAL (FREMONT), LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Zhang, Jinqiu Fremont, US 53 4014

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