Magnetic random access memory
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United States of America Patent
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May 24, 2016
Grant Date -
Mar 12, 2015
app pub date -
Mar 4, 2014
filing date -
Sep 10, 2013
priority date (Note) -
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Abstract
According to one embodiment, a magnetic random access memory includes memory cells, a read circuit, (ECC) circuit, an address register, a flag register, a flag check circuit, and a write back circuit. The memory cells each include a magnetoresistive element. The address register stores the address at which the error has been detected by the ECC circuit. The data register stores corrected data in which the error has been corrected by the ECC circuit. The flag register sets an error flag in association with the address at which the error has been detected by the ECC circuit. The flag check circuit checks whether the error flag is set in the flag register. The write back circuit writes back the data to the memory cell designated by the address corresponding to the error flag.
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