Select devices for memory cell applications

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United States of America Patent

PATENT NO 9349445
APP PUB NO 20130069028A1
SERIAL NO

13234659

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Abstract

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Select devices for memory cell applications and methods of forming the same are described herein. As an example, one or more non-ohmic select devices can include at least two tunnel barrier regions formed between a first metal material and a second metal material, and a third metal material formed between each of the respective at least two tunnel barrier regions. The non-ohmic select device is a two terminal select device that supports bi-directional current flow therethrough.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Srinivasan, Bhaskar Boise, US 101 1402
Wells, David H Boise, US 152 3296
Zahurak, John K Eagle, US 155 2369

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