Boundary word line operation in nonvolatile memory

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United States of America Patent

PATENT NO 9349479
APP PUB NO 20160141047A1
SERIAL NO

14546591

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Abstract

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One or more word lines in a Multi Level Cell (MLC) block are identified as being at high risk of read disturb errors and data is selectively copied from such high risk word lines to a location outside the MLC block where the copy is maintained. Subsequent read requests for the data may be directed to the copy of the data outside the MLC block.

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Patent Owner(s)

  • SANDISK TECHNOLOGIES LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kashyap, Abhilash San Jose, US 3 53
Sehgal, Rohit Mountain View, US 37 213
Yang, Niles Mountain View, US 43 297

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