Hybrid wafer dicing approach using a rectangular shaped two-dimensional top hat laser beam profile or a linear shaped one-dimensional top hat laser beam profile laser scribing process and plasma etch process
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United States of America Patent
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May 24, 2016
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app pub date -
Jul 22, 2014
filing date -
Jul 22, 2014
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Abstract
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a top hat laser beam profile laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.
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