Semiconductor memory device including a memory cell comprising a D/A converter
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United States of America Patent
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May 24, 2016
Grant Date -
Oct 3, 2013
app pub date -
Mar 14, 2013
filing date -
Mar 29, 2012
priority date (Note) -
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Abstract
A nonvolatile semiconductor device is provided. Each memory cell in a semiconductor device includes a D/A converter and an amplifier transistor. An output voltage of the D/A converter is stored as data in the memory cell, whereby two or more bits of data can be stored in the memory cell. By stacking transistors of the D/A converter with an interlayer film provided therebetween and using the parasitic resistance of a conductive material provided in a contact hole formed in the interlayer film as a resistor of the D/A converter, the area of the memory cell can be reduced. The transistor includes an oxide semiconductor in a channel formation region. Accordingly, a nonvolatile semiconductor device can be easily obtained.
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