Stripe orientation for trenches and contact windows
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United States of America Patent
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May 24, 2016
Grant Date -
Sep 18, 2014
app pub date -
Mar 13, 2014
filing date -
Mar 13, 2013
priority date (Note) -
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Abstract
A semiconductor device includes a semiconductor layer having first and second main surfaces, with the first surface defining a plane containing first and second perpendicular axes. A first gate is disposed proximate the first main surface and extends parallel to the first axis. A dielectric layer is formed on the first main surface and separates the first gate from the first main surface. First and second trenches are formed in the semiconductor layer proximate the first gate and spaced apart in a direction parallel to the first axis. First and second pluralities of contact windows are formed in the dielectric layer to expose the first main surface and are respectively arranged in first and second rows extending between the first and second trenches in a direction parallel to the first axis. Adjacent contact windows in each first row are separated only by the dielectric layer.
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